wpmd2010 dual p-channel, -20 v, -3.6a, power mosfet description the wpmd2010 uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. this device is suitable for use in dc-dc co nversion applications. standard product wpmd2010 is pb-free. features v (br)dss r ds(on) typ 75m ? @ ? 4.5v ? 20 v 101m ? @ ? 2.5v pin connections z lower rds(on) solution in 2x2 mm package z 1.8 v rds(on) rating for operation at low voltage gate drive logic level z low profile (< 0.8 mm) for ea sy fit in thin environments z bidirectional current flow with common source configuration z dfn6 package provides exposed drain pad for excellent thermal conduction application z optimized for battery and load management applications in marking diagram portable equipment z li ? ion battery charging and protection circuits w l s i fyww z high power management in portable, battery powered products z high side load switch f = specific device code yww = date code order information part number package shipping wpmd2010-6/tr dfn 6 3000tape&reel 1 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol 10 s steady state unit drain-source voltage v ds -20 gate-source voltage v gs 12 v t a =25c 3.6 3.1 continuous drain current (t j = 150 c) a t a =70c i d 2.9 2.7 a t a =25c 2.0 1.5 maximum power dissipation a t a =70c p d 1.3 1.0 w t a =25c 2.3 2.1 continuous drain current (t j = 150 c) b t a =70c i d 1.8 1.7 a t a =25c 0.8 0.7 maximum power dissipation b t a =70c p d 0.5 0.4 w pulsed drain current c i dm -18 a operating junction and storage temperature range t j , t stg -55 to 150 c thermal resistance ratings single operation parameter symbol typical maximum unit t 10 s 50 62 junction-to-ambient thermal resistance a steady state r ja 65 82 t 10 s 125 150 junction-to-ambient thermal resistance b steady state r ja 145 175 junction-to-case therma l resistance steady state r jc 30 38 c/w dual operation t 10 s 40 50 junction-to-ambient thermal resistance a steady state r ja 52 65 t 10 s 100 120 junction-to-ambient thermal resistance b steady state r ja 116 140 junction-to-case therma l resistance steady state r jc 25 30 c/w a. surface mounted on fr4 board using 1 in sq pad size, 1oz cu. b. surface mounted on fr4 board using the minimum recommended pad size, 1oz cu. c. repetitive rating, pulse width limited by junction temperature, t p =10s, duty cycle=1% ? ? ? ? ? ? ? ? wpmd2010 2 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics mosfet electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditions min typ max uni t off characteristics drain ? to ? source breakdown voltage bv dss v gs = 0 v, i d = ? 250 ua ? 20 v t j = 25c ? 0.1 zero gate voltage drain current i dss v ds = ? 16 v, v gs = 0 v t j = 85c ? 1 ua gate ? to ? source leakage current i gss v ds = 0 v, v gs = 12 v 100 na on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = ? 250 ua ? 0.4 ? 0.6 ? 1.0 v v gs = ? 4.5v, i d = ? 3.1 a 75 120 drain ? to ? source on ? resistance r ds(on) v gs = ? 2.5, i d = ? 2.5 a 101 150 m ? forward transconductance g fs v ds = ? 5 v, i d = ? 3.1a 12 s charges, capacitances and gate resistance input capacitance c iss 400 470 550 output capacitance c oss 45 55 65 reverse transfer capacitance c rss v gs = 0 v, f = 1.0 mhz,v ds = ? 10 v 40 50 60 pf total gate charge q g(tot) 4 6 8 threshold gate charge q g(th) 0.3 0.34 0.4 gate ? to ? source charge q gs 0.5 0.75 1 gate ? to ? drain charge q gd v gs = ? 4.5 v, v ds = ? 10 v, i d = ? 2.7 a 1.0 1.2 1.5 nc gate resistance r g 8.8 ? switching characteristics turn ? on delay time td(on) 6 9 12 rise time tr 5 7 10 turn ? off delay time td(off) 30 40 60 fall time tf v gs = ? 4.5 v, v ds = ? 10 v, r l =3 ? , r g =6 ? 5 7 10 ns drain ? source diode characteristics forward recovery voltage vsd vgs = 0 v, is = ? 1.6 a t j = 25c -0.7 -0.85 -1.5 v wpmd2010 3 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical performance characteristis wpmd2010 4 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
wpmd2010 5 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
wpmd2010 6 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
power dissipation characteristics 1. the package of wpmd2010 is dfn2x2-6l, surf ace mounted on fr4 board using 1 in sq pad size 2 oz cu r ja is 82 /w, surface mounted on fr4 board using minimum pad size 2 oz cu r ja is 175 /w. 2. the power dissipation pd is based on tj (max) = 150c, and the relation between tj and pd is tj = ta + r ja* pd, the maximum power dissipation is determined by r ja . 3. the r ja is the thermal impedance from junction to ambient; using larger pcb pad size can get smaller r ja and result in larger maximum power dissipation. wpmd2010 7 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
packa g in g information dfn 6 package outline dimension wpmd2010 8 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
|
